Page 23 - 電子學含實習

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5. ྡ (5) މ΍ӝ฽׳ɽཥ༩dʊٝ E-MOSFET ʘ K = 1mA/V eV = 1Vdۆཥ
T
v
༩ٙཥᏀᄣू A = v o i ߒމc(A) 0.52c(B) 0.67c(C) 0.85c(D) 0.96f
v

－V DD
+15V
D R 3
V i C 1 G R 1 V o
C 2 V i R
12MΩ L
S V o

3V 1kΩ R 2

ྡ (5) ྡ (6)
6. ਗ਼ڦ໮ପ͛ኜટ׵ྡ (6) ٙ፩ɝ၌ Vd˲ͪتኜٙ CH1 ટЇཥ༩ʘ፩ɝ၌ Vd
i
i
CH2 ટЇཥ༩ٙ፩̈၌ V dሜ዆፩ɝڦ໮ V މ 1kHz ָ͍تfሗਪ፩̈ၾ፩
o
i
ɝتҖʘࣈషʿ޴ЗᗫڷމОkc(A) ፩ɝၾ፩̈تҖΝ޴ЗdV ࣈషʃ׵ V i
o
(B) ፩ɝၾ፩̈تҖ޴З޴ࢨ 180 ܓdV ࣈషʃ׵ V c(C) ፩ɝၾ፩̈تҖΝ޴
o
i
ЗdV ࣈషɽ׵ V c(D) ፩ɝၾ፩̈تҖ޴З޴ࢨ 180 ܓdV ࣈషɽ׵ V f
o
i
i
o
7. νྡ (7) הͪཥ༩dʊٝ FET ʘනΣʝኬ g dׁ߰ଫӝ๕฽ගٙʹݴഃࣖཥ
m
ڜ r dۆɨΐાࠑО٫፹Ⴌkc(A) ፩ɝڜҤ Z = R c(B) ፩̈ڜҤ Z = R c
o
d
i
D
S
(C) v ၾ v Ν޴c(D) v / v = g R f
o
o
i
m
D
i
+V DD
R D
v o
D
C 2
G
C 1 I D C 2
v i S D v o
v i S
C 1 Z o R S G 2kΩ
R S 2MΩ
R i
Z i +20V
ྡ (7) ྡ (8)
8. νྡ (8) הͪʘ N ஷ༸ MOSFET ཥ༩dՉ࿚˟ཥᏀ V GS(off) = –3VdٜݴʈЪ
ᓃʘ V = –1Vdӝ฽ཥݴ I = 8mAf߰ӝ฽ʹݴཥڜ r ׁଫʔࠇdۆʃڦ໮
D
d
GS
ཥᏀᄣू A = v / v ၾ፩ɝڜҤ R މОk
i
i
v
o
(A) A = –24dR = 62.5Ω (B) A = –12dR = 50Ω
v
i
v
i
(C) A = 15dR = 50Ω (D) A = 16dR = 62.5Ωf
v
i
v
i
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