Page 13 - 電子學含實習

ཥɿኪўྼ୦€ɨ

ၚ፯ᇍԷ 1 ΝӉᇖ୦ 1

νྡהͪཥ༩dFET ٙ I DSS = 16mAdV = νྡהͪމ΍๕฽׳ɽኜd߰ఙࣖཥ౺᜗
P
– 4Vd߰ R = 2kΩdV GSQ = –2Vdۆ༈ཥ ਞᅰ r = 30kΩdg = 2mA/VdۆϤཥ༩ٙ
D
d
m
V (1) ʕ᎖ཥᏀᄣू V / V
i
o
༩ٙc(1) ཥᏀᄣू A = V o i c(2) ፩ɝڜҤ (2) ፩ɝڜҤ Z
v
i
Z c(3) ፩̈ڜҤ Z c΢މОk (3) ፩̈ڜҤ Z c΢މОk
o
o
i
＋V DD ＋V DD
R D
2kΩ R D
V o 10k Ω
V o
V i C
V i 2
C 1
R G Z R G

2MΩ R S C S o 1MΩ
Z i V ＋ Z o
Z i GG －

༆ (1) ͟׵ᕚͦ͊ഗʝኬ g m ࠽dה˸΋Ӌ੻
×
g = I 2 DSS 1 ( − V GS ) = 216 ×− −2 ) ഈ
1 (
m V | P | V P | −4 | −4
= 4(mA/V )
፩ɝڦ໮ V i ͟ MOSFET ٙཛྷ฽፩ɝdϾ
፩̈ڦ໮ V o ͟ӝ฽፩̈d݂މ΍๕฽
€CS׳ɽཥ༩dϾC S ཥ࢙ਗ਼R S ཥڜ೵༩f
V
A = V o i = − g ( R // r ) ≈− g R =− ×= −8
42
v
d
m
D
m D
€ࠋ໮ڌͪ V o ၾ V i ˀ޴
(2) Z i = R G = 2MΩ
(3) Z o = R D // r d ≈ R D = 2kΩ
ၚ፯ᇍԷ 2 ΝӉᇖ୦ 2

νྡהͪʘ FET ׳ɽཥ༩dண g = 2mA/Vd νྡהͪʘ׳ɽཥ༩dண MOSFET ʘᑗ
m
2
ۆ (1) ፩ɝڜҤ Zc(2) ፩̈ڜҤ Z c(3) ཥᏀ ޢཥᏀ V = 1Vdਞᅰ K = 0.2mA/V dί
o
i
T
V i ʔϽᅇӝ฽፩̈ཥڜٙઋرɨdՉc(1) ፩
ᄣू A = V o i c(4) ཥݴᄣू A = i o i c΢މОk ɝڜҤ Z c(2) ፩̈ڜҤ Z c(3) ཥᏀᄣू
i
v
i
o
V i
A = V o i c(4) ཥݴᄣू A = i o i c΢މОk
v
i

8